AO4821
12V Dual P-Channel MOSFET
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-12V, V
GS
=0V
T
J
=55°
C
V
DS
=0V, V
GS
= ±8V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-9A
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°
C
V
GS
=-2.5V, I
D
=-8A
V
GS
=-1.8V, I
D
=-6A
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
V
DS
=-5V, I
D
=-9A
I
S
=-1A,V
GS
=0V
-0.35
-60
16
22
19
23
45
-0.56
-1
-3
1390
V
GS
=0V, V
DS
=-6V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
230
120
0.9
15
V
GS
=-4.5V, V
DS
=-6V, I
D
=-9A
3.6
3
V
GS
=-4.5V, V
DS
=-6V, R
L
=0.67Ω,
R
GEN
=3Ω
I
F
=-9A, dI/dt=500A/µs
2
Min
-12
Typ
Max
Units
V
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
-1
-5
±10
-0.53
-0.85
19
27
24
30
µA
µA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
kΩ
nC
nC
nC
ns
ns
µs
µs
Maximum Body-Diode Continuous Current
1740
334
200
1.3
19
4.5
5.3
240
580
7
4.2
18
14
22
17
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
2100
435
280
1.7
23
5.4
7.4
SWITCHING PARAMETERS
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-9A, dI/dt=500A/µs
26
20
ns
nC
A. The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25° The
C.
value in any given application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150° using
≤
10s junction-to-ambient thermal resistance.
C,
C.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150° Ratings are based on low frequency and duty cycles to keep
initialT
J
=25°
C.
D. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2
FR-4 board with
C.
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150° The SOA curve provides a single pulse ratin g.
2/5
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