AO4613 参数 Datasheet PDF下载

AO4613

30V Dual P + N-Channel MOSFET

N-Channel Electrical Characteristics (T

J

=25° unless otherwise noted)

C

Symbol

Parameter

Conditions

I

D

=250µA, V

GS

=0V

V

DS

=24V, V

GS

=0V

T

J

=55°

C

V

DS

=0V, V

GS

=±12V

V

DS

=V

GS

I

D

=250µA

V

GS

=10V, V

DS

=5V

V

GS

=10V, I

D

=7.2A

R

DS(ON)

g

FS

V

SD

I

S

Static Drain-Source On-Resistance

V

GS

=4.5V, I

D

=4A

Forward Transconductance

Diode Forward Voltage

V

DS

=5V, I

D

=7.2A

I

S

=1A

10

T

J

=125°

C

1

20

20

29

30

18

0.77

1

3

522

V

GS

=0V, V

DS

=15V, f=1MHz

V

GS

=0V, V

DS

=0V, f=1MHz

110

75

2.1

11

V

GS

=10V, V

DS

=15V, I

D

=7.2A

5.3

1.9

4

4.7

V

GS

=10V, V

DS

=15V, R

L

=2.1Ω,

R

GEN

=3Ω

I

F

=7.2A, dI/dt=100A/µs

2

Min

30

Typ

Max

Units

V

STATIC PARAMETERS

BV

DSS

Drain-Source Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

I

D(ON)

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

1

5

10

2

3

24

35

40

µA

µA

V

A

mΩ

mΩ

S

V

A

pF

pF

pF

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

Input Capacitance

C

iss

C

oss

C

rss

R

g

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

630

3

15

7

Ω

nC

nC

nC

nC

SWITCHING PARAMETERS

Q

g

(10V) Total Gate Charge

Q

g

(4.5V) Total Gate Charge

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge I

F

=7.2A, dI/dt=100A/µs

7

10

22

7

20

10

ns

ns

ns

ns

ns

nC

4.9

16.2

3.5

15.7

7.9

A: The value of R

θJA

is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T

A

=25° The value

C.

in any given application depends on the user's specific board design. The current rating is based on the t

≤

10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R

θJA

is the sum of the thermal impedence from junction to lead R

θJL

and lead to ambient. R

θJL

and R

θJC

are equivalent terms referring to

thermal resistance from junction to drain lead.

D. The static characteristics in Figures 1 to 6 are obtained using 80

µs

pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25° The SOA

C.

curve provides a single pulse rating.

www.freescale.net.cn