AO4613
30V Dual P + N-Channel MOSFET
General Description
The AO4613 uses advanced trench technology MOSFETs to provide excellent R
DS(ON)
and low
gate charge. The complementary MOSFETs may be used to form a level shifted high side switch,
and for a host of other applications.
Features
N-Channel
P-Channel
V
DS
(V) = 30V
-30V
I
D
= 7.2A (V
GS
=10V)
-6.1A (V
GS
=10V)
R
DS(ON)
R
DS(ON)
< 24mΩ (V
GS
=10V)
< 37mΩ (V
GS
= -10V)
< 40mΩ (V
GS
=4.5V)
< 60mΩ (V
GS
= -4.5V)
SOIC-8
D1
Top View
S2
G2
S1
G1
D2
D2
D1
D1
D2
G1
G2
S1
S2
p-channel
C
Absolute Maximum Ratings T
A
=25° unless otherwise noted
Parameter
Max n-channel
Symbol
Drain-Source Voltage
30
V
DS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
C
T
A
=25°
Power Dissipation
Avalanche Current
B
Repetitive avalanche energy 0.1mH
B
n-channel
Max p-channel
-30
±20
-6.1
-5.1
-30
2
1.44
20
20
-55 to 150
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
T
A
=70°
C
P
D
I
AR
E
AR
T
J
, T
STG
±20
7.2
6.1
30
2
1.44
15
11
-55 to 150
W
A
mJ
°
C
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
t
≤
10s
Maximum Junction-to-Ambient
A
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
A
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
Typ
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Max
55
92
37
48
84
37
62.5
110
50
62.5
110
50
Units
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
