AO4452
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=50V
I
D
=8A
Capacitance (pF)
2500
C
iss
8
2000
V
GS
(Volts)
6
1500
4
1000
C
rss
2
500
C
oss
0
0
15
20
25
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
5
10
30
0
0
40
60
80
V
DS
(Volts)
Figure 8: Capacitance Characteristics
20
100
100
I
AR
(A) Peak Avalanche Current
100.0
I
D
(Amps)
T
A
=25°C
T
A
=100°C
T
A
=150°C
T
A
=125°C
10.0
1.0
0.1
0.0
R
DS(ON)
limited
10µs
100µs
1ms
T
J(Max)
=150°C
T
A
=25°C
10ms
DC
1
10
100
10s
10
0.000001
0.00001
0.0001
0.001
Time in avalanche, t
A
(s)
Figure 9: Single Pulse Avalanche capability (Note
C)
0.01
0.1
V
DS
(Volts)
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
10000
T
A
=25°C
1000
Power (W)
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
4/6
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