AO4452
100V N-Channel MOSFET
General Description
The AO4452 is fabricated with SDMOS
TM
trench technology that combines excellent R
DS(ON)
with low gate
charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well
suited for PWM, load switching and general purpose applications.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 7V)
100V
8A
< 25mΩ
< 31mΩ
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
100
±25
8
6.5
57
28
39
3.1
2
-55 to 150
Units
V
V
A
A
mJ
W
°C
V
GS
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
Repetitive avalanche energy L=0.1mH
T
A
=25°C
Power Dissipation
B
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
31
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
1/6
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