AO4447A 参数 Datasheet PDF下载

AO4447A

30V P-Channel MOSFET

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

160

140

120

100

-I

D

(A)

80

60

40

20

0

0

1

2

3

4

5

-V

DS

(Volts)

Figure 1: On-Region Characteristics(Note E)

10

Normalized On-Resistance

1.8

V

GS

= -2.5V

0

0

1

2

3

4

-V

GS

(Volts)

Figure 2: Transfer Characteristics(Note E)

-3V

-I

D

(A)

-10V

-4.5V

-4V

-3.5V

80

100

V

DS

=-5V

60

40

20

125°C

25°C

8

R

DS(ON)

(m

Ω

)

V

GS

=-4V

6

V

GS

=-4.5V

V

GS

=-10V

1.6

V

GS

= -10V

I

D

= -17A

1.4

V

GS

= -4.5V

I

D

= -15A

1.2

4

1.0

2

0

5

10

15

0.8

I

F

=-6.5A, dI/dt=100A/µs

20

25

30

0

25

50

75

100

125

150

-I

D

(A)

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage(Note E)

Temperature (°C)

Figure 4: On-Resistance vs. Junction

Temperature(Note E)

20

I

D

= -17A

16

R

DS(ON)

(m

Ω

)

12

125°C

I

S

(A)

1E+02

1E+01

1E+00

1E-01

125°C

8

1E-02

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

1E-03

4

25°C

OUT OF SUCH APPLICATIONS OR USES OF 25°CPRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

ITS

1E-04

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

0

1E-05

2

4

6

8

10

0.0

0.2

0.4

0.6

0.8

1.0

-V

GS

(Volts)

-V

SD

(Volts)

Figure 5: On-Resistance vs. Gate-Source

Figure 6: Body-Diode Characteristics(Note E)

Voltage(Note E)

3/5

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