AO4447A
30V P-Channel MOSFET
General Description
The AO4447A uses advanced trench technology to provide excellent R
DS(ON)
with low gate charge.This
device is ideal for load switch and battery protection applications.
Features
V
DS
(V) = -30V
I
D
= -17A
R
DS(ON)
< 7m
R
DS(ON)
< 8m
R
DS(ON)
< 9m
(V
GS
= -10V)
(V
GS
= -10V)
(V
GS
= -4.5V)
(V
GS
= -4V)
SOIC-8
D
Rg
G
S
Absolute Maximum Ratings T
J
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
Symbol
t
≤
10s
Steady State
Steady State
R
θJA
R
θJL
Typ
31
59
16
V
GS
Maximum
-30
±20
-17
-13
-160
3.1
2.0
-55 to 150
Max
40
75
24
Units
V
V
A
Pulsed Drain Current
C
T
A
=25°
C
B
Power Dissipation
T
A
=70°
C
Junction and Storage Temperature Range
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
AD
Maximum Junction-to-Lead
W
°
C
Units
°
C/W
°
C/W
°
C/W
1/5
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
