AO4407A 参数 Datasheet PDF下载

AO4407A

30V P-Channel MOSFET

C

Electrical Characteristics (T

J

=25° unless otherwise noted)

Symbol

Parameter

Conditions

I

D

= -250µA, V

GS

= 0V

V

DS

= -30V, V

GS

= 0V

T

J

= 55°

C

V

DS

= 0V, V

GS

= ±25V

V

DS

= V

GS

I

D

= -250µA

V

GS

= -10V, V

DS

= -5V

V

GS

= -20V, I

D

= -12A

R

DS(ON)

Static Drain-Source On-Resistance

C

T

J

=125°

V

GS

= -10V, I

D

= -12A

V

GS

= -6V, I

D

= -10A

g

FS

V

SD

I

S

Forward Transconductance

Diode Forward Voltage

V

DS

= -5V, I

D

= -10A

I

S

= -1A,V

GS

= 0V

-1.7

-60

8.5

11.5

10

12.7

21

-0.7

-1

-3

2060

V

GS

=0V, V

DS

=-15V, f=1MHz

V

GS

=0V, V

DS

=0V, f=1MHz

370

295

2.4

30

V

GS

=-10V, V

DS

=-15V, I

D

=-12A

4.6

10

11

V

GS

=-10V, V

DS

=-15V, R

L

=1.25Ω,

R

GEN

=3Ω

I

F

=-12A, dI/dt=100A/µs

9.4

24

12

30

22

40

3.6

39

2600

11

15

13

17

S

V

A

pF

pF

pF

Ω

nC

nC

nC

ns

ns

ns

ns

ns

nC

mΩ

-2.3

Min

-30

-1

-5

±100

-3

Typ

Max

Units

V

µA

nA

V

A

STATIC PARAMETERS

BV

DSS

Drain-Source Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

I

D(ON)

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

C

rss

R

g

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

SWITCHING PARAMETERS

Total Gate Charge

Q

g

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge I

F

=-12A, dI/dt=100A/µs

A: The value of R

θJA

is measured with the device mounted on 1 in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

= 25° The

C.

value in any given application depends on the user's specific board design. The current rating is based on the t

≤

10s thermal resistance

rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R

θJA

is the sum of the thermal impedence from junction to lead R

θJL

and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using < 300µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25° The SOA

C.

curve provides a single pulse rating.

F. The current rating is based on the t

≤

10s thermal resistance rating.

G. E

AR

and I

AR

ratings are based on low frequency and duty cycles to keep T

j

=25C.

Rev10: Nov 2010

2/5

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