AO4407A
30V P-Channel MOSFET
General Description
The AO4407A uses advanced trench technology to provide excellent R
DS(ON)
, and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.
Features
V
DS
= -30V
I
D
= -12A
(V
GS
= -20V)
R
DS(ON)
< 11m (V
GS
= -20V)
R
DS(ON)
< 13m (V
GS
= -10V)
R
DS(ON)
< 17m (V
GS
= -6V)
SOIC-8
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
Avalanche Current
G
Repetitive avalanche energy L=0.3mH
T
A
=25°
C
Power Dissipation
A
T
A
=70°
C
G
Maximum
-30
±25
-12
-10
-60
-26
101
3.1
2.0
-55 to 150
Units
V
V
V
GS
T
A
=25°
C
C
T
A
=70°
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
A
mJ
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady State
Steady State
R
θJA
R
θJL
Typ
32
60
17
Max
40
75
24
Units
°
C/W
°
C/W
°
C/W
1/5
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
