AO3460
60V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=30V
I
D
=0.65A
Capacitance (pF)
30
25
20
15
10
5
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
10
20
30
40
50
60
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
iss
8
V
GS
(Volts)
6
V
DS
=0V, V
GS
=±10V
V
DS
=V
GS
I
D
=250µA
4
C
oss
C
rss
2
0
10.000
20
1.000
10µs
100µs
R
DS(ON)
limited
DC
Power (W)
16
12
8
4
0
0.0001
T
J(Max)
=150°C
T
A
=25°C
I
D
(Amps)
1ms
10ms
0.1s
1s
10s
0.100
0.010
T
J(Max)
=150°
C
T
C
=25°
C
0.001
0.01
0.1
1
V
DS
(Volts)
10
100
0.001
0.01
0.1
1
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=125°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
T
on
T
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4/4
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