AO3460
60V N-Channel MOSFET
General Description
The AO3460 uses advanced trench technology to provide excellent R
DS(ON)
, low gate charge, and
operation with gate voltages as low as 4.5V, in the small SOT-23 footprint. It can be used for a wide
variety of applications, including load switching, low current inverters and low current DC-DC converters.
It is ESD protected.
Features
V
DS
(V) = 60V
I
D
= 0.65A (V
GS
= 10V)
R
DS(ON)
< 1.7Ω (V
GS
= 10V)
R
DS(ON)
< 2Ω (V
GS
= 4.5V)
ESD protected
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Maximum
V
DS
Drain-Source Voltage
60
Gate-Source Voltage
Continuous Drain
Current
A, F
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
Power Dissipation
A
Units
V
V
A
V
GS
I
D
I
DM
P
D
±20
0.65
0.5
1.6
1.4
0.9
-55 to 150
Pulsed Drain Current
B
T
A
=70°
C
W
°
C
Junction and Storage Temperature Range T
J
, T
STG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
70
100
63
Max
90
125
80
Units
°
C/W
°
C/W
°
C/W
1/4
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
