AO3162
600V,0.034A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=400V
I
D
=0.01A
Capacitance (pF)
100.00
8
10.00
C
iss
V
GS
(Volts)
6
1.00
C
oss
4
C
rss
0.10
2
0
0.00
0.06
0.09
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0.03
0.12
0.01
0.1
1
10
V
DS
(Volts)
Figure 8: Capacitance Characteristics
100
1
100µs
0.1
I
D
(Amps)
R
DS(ON)
limited
DC
T
J(Max)
=150°C
T
A
=25°C
0.0001
1
10
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
1000
10ms
0.1s
1s
10s
Power (W)
1ms
0.01
120
100
80
60
40
20
0
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
T
J(Max)
=150°C
T
A
=25°C
0.001
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=125°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
0.01
Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
T
on
T
4/5
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