AO3162
600V,0.034A N-Channel MOSFET
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
STATIC PARAMETERS
BV
DSS
BV
DSS
/∆TJ
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
V
SD
I
S
I
SM
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Pulsed Current
C
I
D
=250µA, V
GS
=0V, T
J
=25°
I
D
=250µA, V
GS
=0V, T
J
=150°
C
ID=250µA, VGS=0V
V
DS
=600V, V
GS
=0V
V
DS
=480V, T
J
=125°
C
V
DS
=0V, V
GS
=±30V
V
DS
=5V, I
D
=8µA
V
GS
=10V, I
D
=0.016A
V
DS
=40V, I
D
=0.016A
I
S
=0.016A,V
GS
=0V
600
-
-
-
-
-
2.8
-
-
-
-
-
-
V
GS
=0V, V
DS
=25V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
-
-
14
-
V
GS
=10V, V
DS
=400V, I
D
=0.01A
-
-
-
V
GS
=10V, V
DS
=300V, I
D
=0.01A,
R
G
=6Ω
I
F
=0.016A,dI/dt=100A/µs,V
DS
=300V
-
-
-
-
-
-
700
0.69
-
-
-
3.2
154
0.045
0.74
-
-
4.2
0.45
0.05
28
0.1
0.03
0.05
13.8
10
39.2
13
105
9.5
-
-
-
1
10
±100
4.1
500
-
1
0.034
0.16
6
0.6
0.07
42
0.15
0.05
0.08
20
15
57
19
160
14.3
V
V/
o
C
µA
nΑ
V
Ω
S
V
A
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
Parameter
Conditions
Min
Typ
Max
Units
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=0.016A,dI/dt=100A/µs,V
DS
=300V
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in
any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA curve
provides a single pulse rating.
F. The current rating is based on the t
≤
10s thermal resistance rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2/5
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