[1]
2. Absolute maximum ratings
Parameter
Symbol
Value
324
90
Unit
mW
mA
mA
V
Power Dissipation
Pd
IF
Forward Current
[2]
Peak Forward Current (per die)
Reverse Voltage (per die)
IFM
100
5
VR
Operating Temperature
Storage Temperature
Junction Temperature
Topr
Tstg
Tj
-40~+85
-40~+100
125
℃
℃
℃
[1] Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product.
[2] IFM was measured at Tw≤1 msec of pulse width and D≤1/10 of duty ratio.
3. Electro-Optical characteristics
Parameter
Symbol
Condition
IF=20mA
VF=5V
Min.
Typ.
3.2
-
Max.
Unit
Forward Voltage (per die) *
Reverse Current (per die)
Luminous Intensity*[1]
Color Temperature
VF
IR
2.9
3.5
V
μ
A
-
4.5
4,700
-
10
Iv
IF=60mA
IF=60mA
IF=60mA
IF=60mA
IF=60mA
6.2
-
-
cd
K
CCT
Ŋelc
7,000
Optical Temperature
101
120
68
-
-
-
lm/W
deg.
-
[2]
Θ
2
Viewing Angle
-
1/2
Color Rendering Index*
ESD (HBM)
Ra
62
1
73
-
Ω
1.5k ;100pF
KV
[3]
Thermal resistance
RthJS
IF=20mA
18
ºC/W
[1] The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned
with the mechanical axis of the LED package.
[2] 2Θ1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity.
[3] Thermal resistance: RthJS (Junction / solder)
* Tolerance : VF :±0.05V, IV :±10%, Ra :±3, x,y :±0.01
[Note] All measurements were made under the standardized environment of SSC.
Rev. 09
March 2010
www.acriche.com
SSC-QP-7-07-24 (Rev.00)
SEOUL [ Seoul Semiconductor ]
