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1SS367 参数 Datasheet PDF下载

1SS367图片预览
型号: 1SS367
PDF下载: 下载PDF文件 查看货源
内容描述: 硅外延肖特基二极管 [SILICON EPITAXIAL SCHOTTKY BARRIER DIODE]
分类和应用: 肖特基二极管光电二极管
文件页数/大小: 3 页 / 175 K
品牌: SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
 浏览型号1SS367的Datasheet PDF文件第1页浏览型号1SS367的Datasheet PDF文件第3页  
1SS367
I
F
- V
F
300m
100m
Forward Current I
F
(A)
30m
10m
3m
1m
300
100
30
10
0
0.1
0.2
0.3
0.4
Forward Voltage V
F
(V)
0.5
Ta=100°C
1m
300
100
Reverse Current I
R
(A)
30
10
3
1
I
R
- V
R
Ta=100°C
75°C
50°C
75°C
50°C
25°C
0°C
-25°C
25°C
0°C
300n
100n
30n
10n
0
2
4
10
12
6
8
Reverse Voltage V
R
(V)
14
-25°C
40
C
T
-V
R
f=1MHz
Ta=25°C
Power Dissipation P
tot
(mW)
240
200
160
120
80
40
0
P
tot
- Ta
Mounted on a glass
epoxy circuit board of
20*20mm, pad
dimension 4*4 mm
Capacitance C
T
(pF)
30
20
10
0
0.3
1
10m 30m 0.1
Reverse Voltage V
R
(V)
3
10
0
75
100
25
50
125
Ambient Temperature Ta (°C)
150
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006