1SS367
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
Features
• Low forward voltage
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
2
Applications
• High Speed Switching
1
S3
Top View
Marking Code: "S3"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Maximum (Peak) Reverse Voltage
Reverse Voltage
Average Forward Current
Maximum (Peak) Forward Current
Surge Current (10 ms)
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Symbol
V
RM
V
R
I
O
I
FM
I
FSM
P
tot
T
J
T
opr
T
s
Value
15
10
100
200
1
200
125
- 40 to + 100
- 55 to + 125
Unit
V
V
mA
mA
A
mW
O
C
C
C
O
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 5 mA
at I
F
= 100 mA
Reverse Current
at V
R
= 10 V
Total Capacitance
at f = 1 MHz
Symbol
V
F
Max.
0.3
0.5
20
40
Unit
V
I
R
C
T
µA
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
