STM2A60
Electrical Characteristics
Ratings
Typ. Max.
Symbol
Items
Conditions
Unit
Min.
V
D = VDRM, Single Phase, Half Wave
Repetitive Peak Off-State
Current
IDRM
0.5
mA
V
─
─
TJ = 125 °C
VTM
IT = 2.1 A, Inst. Measurement
Peak On-State Voltage
1.6
20
─
─
─
─
─
─
─
─
─
─
─
─
─
─
I+
Ⅰ
GT1
I -
VD = 6 V, RL=10 Ω
Gate Trigger Current
20
mA
Ⅱ
GT1
I -
20
Ⅲ
Ⅰ
GT3
V+
1.5
1.5
1.5
─
GT1
V-GT1
VD = 6 V, RL=10 Ω
Gate Trigger Voltage
V
Ⅱ
V-GT3
VGD
Ⅲ
─
TJ = 125 °C, VD = 1/2 VDRM
Non-Trigger Gate Voltage
0.2
V
TJ = 125 °C, VD=2/3 VDRM
Critical Rate of Rise Off-State
Voltage
dv/dt
1000
V/㎲
─
─
─
exponential waveform, gate open circuit
TJ = 125 °C, [di/dt]c = -0.75 A/ms,
VD=2/3 VDRM
Critical Rate of Rise Off-State
Voltage at Commutation
(dv/dt)c
5.0
V/㎲
─
IH
Holding Current
5
mA
─
─
15
Rth(j-sp)
Thermal Impedance
Junction to solder point
°C/W
°C/W
°C/W
─
─
─
─
─
─
Junction to Ambient(minimum footprint)
Junction to Ambient(pad area as in fig 11.)
156
70
Thermal Impedance
(pcb mounted)
Rth(j-a)
※ Notes :
1. Pulse Width ≤ 300us , Duty cycle ≤ 2%
2/6
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
