Preliminary
SemiWell Semiconductor
STM2A60
Bi-Directional Triode Thyristor
Symbol
○ 2.T2
Features
▼▲
◆ Repetitive Peak Off-State Voltage : 600V
○
3.Gate
◆ R.M.S On-State Current ( I
= 2 A )
T(RMS)
◆ High Commutation dv/dt (3-Quadrant )
◆ Surface Mount Package
○
1.T1
SOT-223
General Description
2
This device is suitable for low power AC switching applica-
tion, phase control application such as fan speed and tem-
perature modulation control, lighting control and static
switching relay.
3
2
1
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
VDRM
Parameter
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Condition
Ratings
Units
Sine wave, 50 to 60 Hz, Gate open
TC =77 °C, Full Sine wave
600
2
V
A
IT(RMS)
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
ITSM
I2t
Surge On-State Current
20/22
2
A
I2t for Fusing
A2s
W
tp = 10ms
T
C = 77 °C, Pulse width ≤ 1.0us
PGM
PG(AV)
IGM
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
5
0.5
2
Over any 20ms period
tp = 20us, TJ=125°C
W
A
tp = 20us, TJ=125°C
VGM
TJ
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Mass
5
V
°C
°C
g
- 40 ~ 125
- 40 ~ 150
0.11
TSTG
Apr, 2004. Rev. 0
1/6
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
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