SCP6C60
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Ratings
Typ.
Symbol
Items
Conditions
Unit
Min.
Max.
VAK = VDRM
Repetitive Peak Off-State
Current
IDRM
VTM
IGT
TC = 25 °C
10
200
─
─
─
─
㎂
V
TC = 125 °C
Peak On-State Voltage (1)
Gate Trigger Current (2)
1.6
15
I
TM = 9 A
tp=380㎲
─
─
─
─
VAK = 6 V(DC), RL=10 Ω
mA
TC = 25 °C
VD = 6 V(DC), RL=10 Ω
VGT
Gate Trigger Voltage (2)
1.5
V
TC = 25 °C
TC = 125 °C
─
─
VGD
V
AK = 12 V, RL=100 Ω
Non-Trigger Gate Voltage (1)
0.2
V
─
─
─
─
Linearslopeup to VD=VDRM 67%,
Critical Rate of Rise Off-State
Voltage
dv/dt
200
V/㎲
Gate open
TJ = 125°C
IT = 100mA, Gate Open
IH
Holding Current
TC = 25 °C
20
mA
─
─
Rth(j-c)
Rth(j-a)
Thermal Impedance
Thermal Impedance
Junction to case
2.5
60
°C/W
°C/W
─
─
─
─
Junction to Ambient
※ Notes :
1. Pulse Width = 1.0 ms , Duty cycle ≤ 1%
2. RGK Current not Included in measurement.
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2/5
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
