SemiWell Semiconductor
SCP6C60
Silicon Controlled Rectifiers
Symbol
3. Gate
○
○
○
Features
2. Anode
1. Cathode
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( I
= 6 A )
T(RMS)
◆ Low On-State Voltage (1.4V(Typ.)@ I
◆ Non-isolated Type
)
TM
TO-220
General Description
Standard gate triggering SCR is suitable for the application where
requiring high bidirectional blocking voltage capability and also
suitable for over voltage protection ,motor control circuit in power
tool, inrush current limit circuit and heating control system.
1
2
3
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
VDRM
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Condition
Ratings
Units
600
3.8
6
V
A
A
Half Sine Wave : TC = 109 °C
180° Conduction Angle
IT(AV)
IT(RMS)
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
ITSM
I2t
Surge On-State Current
66
21
A
I2t for Fusing
A2s
t = 8.3ms
di/dt
PGM
PG(AV)
IFGM
VRGM
TJ
Critical rate of rise of on-state current
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
50
A/㎲
W
5
0.5
W
2
A
5.0
V
- 40 ~ 125
- 40 ~ 150
°C
°C
TSTG
Information offers: http://www.kkg.com.cn
Aug, 2003. Rev. 1
1/5
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
