BTA06-600B
Electrical Characteristics
Ratings
Typ.
Symbol
Items
Conditions
Unit
Min.
Max.
V
D = VDRM, Single Phase, Half Wave
Repetitive Peak Off-State
Current
IDRM
1.0
mA
V
─
─
TJ = 125 °C
VTM
IT = 8 A, Inst. Measurement
Peak On-State Voltage
1.5
20
─
─
─
─
─
─
─
─
─
─
─
─
─
─
I+
Ⅰ
GT1
I -
V
V
D = 6 V, RL=10 Ω
Gate Trigger Current
20
mA
Ⅱ
GT1
I -
20
Ⅲ
Ⅰ
GT3
V+
1.5
1.5
1.5
─
GT1
V-GT1
D = 6 V, RL=10 Ω
Gate Trigger Voltage
V
Ⅱ
V-GT3
VGD
Ⅲ
─
TJ = 125 °C, VD = 1/2 VDRM
Non-Trigger Gate Voltage
0.2
V
TJ = 125 °C, [di/dt]c = -3.0 A/ms,
VD=2/3 VDRM
Critical Rate of Rise Off-State
Voltage at Commutation
(dv/dt)c
5.0
V/㎲
─
─
IH
Holding Current
10
mA
─
─
─
Rth(j-c)
Thermal Impedance
Junction to case
3.8
°C/W
─
2/6
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
