Preliminary
SemiWell Semiconductor
BTA06-600B
UL : E228720
Bi-Directional Triode Thyristor
Symbol
○ 2.T2
Features
▼▲
○
3.Gate
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( I
= 6 A )
T(RMS)
○
1.T1
◆ High Commutation dv/dt
◆ Isolation Voltage ( V
= 1500V AC )
ISO
TO-220F
General Description
This device is fully isolated package suitable for AC switching
application, phase control application such as fan speed and
temperature modulation control, lighting control and static
switching relay.
This device is approved to comply with applicable require-
ments by Underwriters Laboratories Inc.
1
2
3
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
VDRM
Parameter
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Condition
Ratings
600
Units
V
A
TC = 94 °C
IT(RMS)
6.0
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
ITSM
Surge On-State Current
60/66
A
I2t
PGM
PG(AV)
IGM
18
3.0
I2t
A2s
W
W
A
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
0.3
2.0
VGM
VISO
TJ
Peak Gate Voltage
10
V
Isolation Breakdown Voltage(R.M.S.)
Operating Junction Temperature
Storage Temperature
Mass
A.C. 1 minute
1500
- 40 ~ 125
- 40 ~ 150
2.0
V
°C
°C
g
TSTG
Mar, 2004. Rev. 0
1/6
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
