SAMWIN
Fig. 1. On-state characteristics
SW30N06
Fig. 2. Transfer characteristics
10
2
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom : 5.0 V
Top :
10
2
I
D
, Drain Current [A]
10
1
I
D
, Drain Current [A]
10
1
175 C
25 C
-55 C
o
o
o
*. Notes :
1. 250us Pulse Test
O
2. T
C
= 25 C
*. Notes :
1. V
DS
=V
GS
2. 250us Pulse Test
10
0
10
-1
10
0
10
1
10
0
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Fig. 3. On-resistance variation vs.
drain current and gate voltage
100
Fig. 4. On state current vs.
diode forward voltage
10
2
Drain-Source On-Resistance[m¥ط]
V
GS
= 10V
60
R
DS(ON)
,
V
GS
= 20V
40
I
DR
, Reverse Drain Current[A]
80
10
1
175 C
25 C
*. Notes :
1. V
GS
= 0V
2. 250us Pulse Test
0
O
O
20
*. Note : T
J
= 25 C
O
0
0
20
40
60
80
100
120
140
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage[V]
Fig. 5. Capacitance characteristics
(Non-Repetitive)
1500
C
iss
=C
gs
+C
gd
(C
ds
=shorted)
C
oss
=C
ds
+C
gd
C
rss
=C
gd
Fig. 6. Gate charge characteristics
12
10
V
DS
= 48V
V
DS
= 30V
V
GS
, Gate-Source Voltage [V]
Capacitance [pF]
1000
C
iss
*. Notes :
1. V
GS
= 0V
2. f=1MHz
8
6
500
C
oss
C
rss
4
2
*. Note : I
D
= 30.0 A
0
0
5
10
15
20
25
30
35
0
0
5
10
15
20
25
V
DS
, Drain-Source Voltage [V]
Q
g
, Total Gate Charge [nC]
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