SAMWIN
SW30N06
N-channel MOSFET
Features
■
High ruggedness
■
R
DS(ON)
(Max 0.036
Ω)@V
GS
=10V
■
Gate Charge (Typ 20nC)
■
Improved dv/dt Capability
■
100% Avalanche Tested
TO-220
TO-251
TO-252
BV
DSS
: 60V
I
D
: 30A
R
DS(ON)
: 0.036 ohm
2
1
1
2
3
1
2
3
2
3
1. Gate 2. Drain 3. Source
1
General Description
These N-channel enhancement mode power field effect transistors are produced using
SAMWIN’s proprietary, planar stripe, DMOS technology.
This advanced technology enable power MOSFET to have better characteristics, such as
fast switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers
3
Order Codes
Item
1
2
3
Sales Type
SW P 30N06
SW I 30N06
SW D 30N06
Marking
SW30N06
SW30N06
SW30N06
Package
TO-220
TO-251
TO-252
Packaging
TUBE
TUBE
REEL
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
STG
, T
J
T
L
Drain to Source Voltage
Continuous Drain Current (@T
C
=25
o
C)
Continuous Drain Current (@T
C
=100
o
C)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@T
C
=25
o
C)
Derating Factor above 25
o
C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
(note 2)
(note 1)
(note 3)
(note 1)
Parameter
Value
60
30
14
120
±
20
178
4.0
7.0
44
0.57
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/
o
C
o
C
o
C
Thermal characteristics
Symbol
R
thjc
R
thcs
R
thja
May. 2011. Rev. 3.0
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
Min.
Typ.
Max.
2.85
50
110
Unit
o
C/W
o
C/W
o
C/W
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