SAMWIN
SW12N65
Fig. 1. On-state characteristics
Fig. 2. Transfer characteristics
VGS
Top :
15.0 V
10.0V
8.0V
7.0V
6.0V
5.5V
5.0V
101
150oC
101 Bottom: 4.5 V
-55oC
25oC
100
※Notes :
1. 250µ s Pulse Test
2. TC = 25℃
100
※Notes :
1. VDS = 40V
2. 250µ s Pulse Test
-1
10
100
101
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Fig. 3. On-resistance variation vs.
drain current and gate voltage
Fig. 4. On state current vs.
diode forward voltage
1.5
101
VGS = 10V
1.0
100
150℃
VGS = 20V
※Notes :
1. VGS = 0V
2. 250µ s Pulse Test
0.5
25℃
※Note: T = 25℃
J
-1
10
0
5
10
15
20
25
30
35
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
V , Source-Drain voltage [V]
SD
Fig. 5. Capacitance characteristics
(Non-Repetitive)
Fig. 6. Gate charge characteristics
3500
12
Ciss = Cgs + Cgd (Cds = shorted)
C
C
oss = C + C
gd
rss = Cds
VDS = 120V
gd
3000
2500
2000
1500
1000
500
10
VDS = 300V
VDS = 480V
C
iss
8
C
oss
6
4
※Notes ;
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
※Note : ID = 12A
0
0
10
-1
100
101
0
10
20
30
40
50
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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SEMIPOWER [ XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. ]
