SAMWIN
SW12N65
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
ID=250uA, referenced to 25oC
650
-
-
-
-
V
ΔBVDSS Breakdown voltage temperature
0.63
V/oC
/ ΔTJ
coefficient
V
DS=650V, VGS=0V
-
-
-
-
-
-
-
-
1
uA
uA
nA
nA
IDSS
Drain to source leakage current
V
DS=520V, TC=125oC
50
Gate to source leakage current, forward
Gate to source leakage current, reverse
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
100
-100
IGSS
On characteristics
VGS(TH) Gate threshold voltage
RDS(ON) Drain to source on state resistance
Dynamic characteristics
VDS=VGS, ID=250uA
VGS=10V, ID = 6A
2.0
-
4.0
0.8
V
0.7
Ω
Ciss
Coss
Crss
td(on)
tr
Input capacitance
1950
156
32
2530
205
42
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
VGS=0V, VDS=25V, f=1MHz
pF
ns
25
60
73
180
300
160
60
VDS=325V, ID=12A, RG=25Ω
td(off)
tf
Turn off delay time
Fall time
148
76
Qg
Total gate charge
Gate-source charge
Gate-drain charge
47
Qgs
Qgd
VDS=520V, VGS=10V, ID=12A
9
-
nC
12
-
Source to drain diode ratings characteristics
Symbol
Parameter
Continuous source current
Pulsed source current
Test conditions
Min.
Typ.
Max. Unit
IS
-
-
-
-
-
-
-
12
48
1.5
-
A
A
Integral reverse p-n Junction
diode in the MOSFET
ISM
VSD
Diode forward voltage drop.
Reverse recovery time
IS=12A, VGS=0V
-
V
Trr
400
4.8
ns
uC
IS=12A, VGS=0V,
dIF/dt=100A/us
Qrr
Breakdown voltage temperature
-
※. Notes
1.
2.
3.
4.
5.
Repeatitive rating : pulse width limited by junction temperature.
L = 13mH, IAS = 12.0A, VDD = 50V, RG=50Ω, Starting TJ = 25oC
I
SD ≤ 12.0A, di/dt = 300A/us, VDD ≤ BVDSS, Staring TJ =25oC
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
2/7
SEMIPOWER [ XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. ]
