Typical Characteristics
VGS, Gate-Source Voltage[V]
VDS, Drain-Source Voltage[V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
0.7
0.6
0.5
0.4
0.3
0.2
0.1
VGS = 10V
VGS = 20V
∗ Note : TJ = 25oC
0
10
20
30
40
50
60
70
ID, Drain Current [A]
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
12
10
8
5000
4000
3000
2000
1000
0
C
iss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
rss = Cgd
C
C
VDS = 100V
VDS = 250V
VDS = 400V
C
iss
Coss
6
* Note ;
1. VGS = 0 V
4
2. f = 1 MHz
C
2
rss
∗ Note : ID = 19A
0
-1
10
100
101
0
10
20
30
40
50
60
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Nov 2009
SEMIHOW [ SEMIHOW CO.,LTD. ]
