Nov 2009
BVDSS = 500 V
DS(on) typ = 0.220Ω
R
HFH18N50S
500V N-Channel MOSFET
ID = 19 A
TO-3P
FEATURES
1
Originative New Design
2
3
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 52 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 0.220 Ω (Typ.) @VGS=10V
100% Avalanche Tested
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
V
VDSS
Drain-Source Voltage
Drain Current
500
19
ID
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
A
Drain Current
11.4
76
A
IDM
Drain Current
– Pulsed
(Note 1)
A
VGS
EAS
IAR
Gate-Source Voltage
±30
945
19
V
Single Pulsed Avalanche Energy
Avalanche Current
(Note 2)
(Note 1)
(Note 1)
(Note 3)
mJ
A
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
23
mJ
V/ns
4.5
Power Dissipation (TC = 25℃)
- Derate above 25℃
239
1.92
W
W/℃
℃
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
℃
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC
RθCS
Junction-to-Case
Case-to-Sink
--
0.24
--
0.52
--
℃/W
Junction-to-Ambient
40
RθJA
◎ SEMIHOW REV.A0,Nov 2009
SEMIHOW [ SEMIHOW CO.,LTD. ]
