Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
12
10
8
250
200
150
100
50
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
C
iss
C
VDS = 120V
VDS = 300V
VDS = 480V
6
Coss
4
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
* Notes : ID = 0.9 A
0
0
10
-1
100
101
0
1
2
3
4
5
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Dec 2005
SEMIHOW [ SEMIHOW CO.,LTD. ]
