Dec 2005
BVDSS = 600 V
DS(on) typ = 9.5 Ω
R
HFD1N60 / HFU1N60
600V N-Channel MOSFET
ID = 0.9 A
D-PAK
I-PAK
2
FEATURES
1
1
3
2
3
Originative New Design
HFD1N60
HFU1N60
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 4.0 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 9.5 Ω (Typ.) @VGS=10V
100% Avalanche Tested
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
V
VDSS
Drain-Source Voltage
Drain Current
600
0.9
ID
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
A
Drain Current
0.57
3.6
A
IDM
VGS
EAS
IAR
Drain Current
– Pulsed
(Note 1)
A
Gate-Source Voltage
±30
50
V
Single Pulsed Avalanche Energy
Avalanche Current
(Note 2)
(Note 1)
(Note 1)
(Note 3)
mJ
A
0.9
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
3.1
mJ
V/ns
5.5
Power Dissipation (TA = 25℃) *
Power Dissipation (TC = 25℃)
2.5
31
W
W
- Derate above 25℃
Operating and Storage Temperature Range
0.25
W/℃
℃
TJ, TSTG
TL
-55 to +150
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
℃
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC
RθJA
Junction-to-Case
--
--
--
4.0
Junction-to-Ambient*
Junction-to-Ambient
50
℃/W
110
RθJA
* When mounted on the minimum pad size recommended (PCB Mount)
◎ SEMIHOW REV.A0,Dec 2005
SEMIHOW [ SEMIHOW CO.,LTD. ]
