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HCD65R660S 参数 Datasheet PDF下载

HCD65R660S图片预览
型号: HCD65R660S
PDF下载: 下载PDF文件 查看货源
内容描述: [650V N-Channel Super Junction MOSFET]
分类和应用:
文件页数/大小: 8 页 / 285 K
品牌: SEMIHOW [ SEMIHOW CO.,LTD. ]
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Typical Characteristics  
VGS  
Top :  
15.0 V  
10.0 V  
8.0 V  
7.0 V  
6.0 V  
5.5 V  
10  
101  
Bottom : 5.0 V  
25oC  
150oC  
1
-25oC  
6
* Notes :  
1. VDS= 30V  
* Notes :  
1. 300us Pulse Test  
2. TC = 25oC  
2. 300us Pulse Test  
100  
100  
0.1  
101  
2
4
8
10  
VGS, Gate-Source Voltage [V]  
VDS, Drain-Source Voltage [V]  
Figure 1. On Region Characteristics  
Figure 2. Transfer Characteristics  
1.6  
1.2  
0.8  
0.4  
0.0  
10  
VGS = 10V  
1
150oC  
25oC  
VGS = 20V  
* Notes :  
1. VGS= 0V  
Note : TJ = 25oC  
12 15  
2. 300us Pulse Test  
0.1  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
3
6
9
VSD, Source-Drain Voltage [V]  
ID, Drain Current [A]  
Figure 4. Body Diode Forward Voltage  
Variation with Source Current  
and Temperature  
Figure 3. On Resistance Variation vs  
Drain Current and Gate Voltage  
12  
10  
8
C
iss = Cgs + Cgd (Cds = shorted)  
Coss = Cds + Cgd  
rss = Cgd  
VDS = 130V  
VDS = 325V  
VDS = 520V  
4000  
3000  
2000  
1000  
0
C
Coss  
6
* Note ;  
1. VGS = 0 V  
4
2. f = 1 MHz  
C
iss  
2
C
Note : ID = 6.2A  
rss  
0
-1  
100  
101  
0
3
6
9
12  
15  
10  
QG, Total Gate Charge [nC]  
VDS, Drain-Source Voltage [V]  
Figure 5. Capacitance Characteristics  
Figure 6. Gate Charge Characteristics  
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