June 2015
BVDSS = 650 V
RDS(on) typ = 0.6 ȍ
HCD65R660S / HCU65R660S
650V N-Channel Super Junction MOSFET
ID = 6.2 A
D-PAK
I-PAK
FEATURES
2
1
Originative New Design
1
3
2
3
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 14 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) ꢀꢁꢁꢂꢃꢄꢁȍꢁꢅ7\Sꢃꢆꢁ#9GS=10V
100% Avalanche Tested
HCD65R660S HCU65R660S
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
TC=25 unless otherwise specified
Symbol
VDSS
Parameter
Value
Units
V
Drain-Source Voltage
Drain Current
650
– Continuous (TC = 25)
– Continuous (TC = 100)
6.2
A
ID
Drain Current
3.5
A
(Note 1)
IDM
Drain Current
– Pulsed
18
A
VGS
EAS
IAR
Gate-Source Voltage
ρ20
V
(Note 2)
(Note 1)
(Note 1)
Single Pulsed Avalanche Energy
Avalanche Current
120
mJ
A
2
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25)*
1
mJ
V/ns
W
15
2.5
63
PD
W
Power Dissipation (TC = 25)
- Derate above 25
0.5
W/
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
Units
RșJC
RșJA
RșJA
Junction-to-Case
--
--
--
2.0
Junction-to-Ambient*
Junction-to-Ambient
50
/W
110
* When mounted on the minimum pad size recommended (PCB Mount)
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