SILICON EPITAXIAL
DUAL NPN TRANSISTORS
2N3904DCSM
ELECTRICAL CHARACTERISTICS (Each Side, T = 25°C unless otherwise stated)
A
Symbols
Parameters
Test Conditions
Min. Typ
Max. Units
I
V
V
= 30V
= 3V
I = 0
E
Collector-Cut-Off Current
Emitter Cut-Off Current
30
nA
30
CBO
CB
EB
I
I = 0
C
EBO
Collector-Base Breakdown
Voltage
V
I
= 10µA
60
40
6
(BR)CBO
C
(2)
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
V
I
= 1.0mA
V
(BR)CEO
C
V
I = 10µA
E
(BR)EBO
I
I
I
I
I
I
I
I
I
= 0.1mA
= 1.0mA
= 10mA
= 50mA
= 100mA
= 10mA
= 50mA
= 10mA
= 50mA
40
70
C
C
C
C
C
C
C
C
C
(2)
Forward-current transfer
ratio
h
V
= 1.0V
100
60
300
FE
CE
30
I = 1.0mA
B
0.65
0.85
0.95
(2)
Base-Emitter Saturation
Voltage
V
BE(sat)
I = 5mA
B
I = 1.0mA
B
0.2
(2)
Collector-Emitter Saturation
Voltage
V
V
CE(sat)
I = 5mA
B
0.3
I = 500mA
B
1.45
2
(2)
Forward Base-Emitter
Voltage
V
BE(f)
I = 200mA
B
T
= 100°C
= 20V
A
DYNAMIC CHARACTERISTICS
I
= 10mA
V
V
C
CE
f
Transition Frequency
Small-Signal Current Gain
Output Capacitance
Input Capacitance
300
100
MHz
T
f = 100MHz
= 1.0mA
I
= 10V
C
CE
h
400
fe
f = 1.0KHz
= 5V
V
I = 0
E
CB
f = 1.0MHz
= 0.5V
C
C
4
obo
ibo
pF
V
I = 0
C
EB
f = 1.0MHz
= 100 µA
8
I
V
= 5V
C
CE
NF(3)
Noise Figure
5
dB
ns
R = 1.0KΩ
S
f = 10Hz To 15.7KHz
t
V
I
= 3V
V
I
= 0.5V
Delay Time
Rise Time
35
35
d
CC
BE
t
r
= 10mA
= 3V
= 1.0mA
C
B1
t
V
I
I = 10mA
C
Storage Time
Fall Time
200
50
s
CC
t
f
= I = 1.0mA
B1 B2
Notes
(2) Pulse Width ≤ 300us, δ ≤ 2%
(3) By design only, not a production test.
Semelab Limited
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Document Number 9009
Issue 1
Page 2 of 3
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