SILICON EPITAXIAL
DUAL NPN TRANSISTORS
2N3904DCSM
•
•
•
•
Dual Silicon Planar NPN Transistors.
Hermetic Ceramic Surface Mount Package.
Designed For General Purpose and Switching Applications.
Screening Options Available.
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)
A
Each Side
Total Device
V
V
V
I
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
60V
40V
CBO
CEO
EBO
6V
Continuous Collector Current
Total Power Dissipation at
200mA
500mW
C
600mW(1)
P
T = 25°C
A
D
Derate Above 25°C
2.86mW/°C 3.43mW/°C
-55 to +200°C
T
T
Junction Temperature Range
Storage Temperature Range
J
-55 to +200°C
stg
THERMAL PROPERTIES (Each Side)
Symbols
Parameters
Min.
Typ. Max. Units
350 °C/W
R
Thermal Resistance, Junction To Ambient
θJA
Notes
(1) Total device power dissipation limited by package.
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 9009
Issue 1
Page 1 of 3
Website: http://www.semelab-tt.com