E0C63B07
q
Oscillation Characteristics
The oscillation characteristics change depending on the conditions (components used, board pattern, etc.). Use the follow-
ing characteristics as reference values.
OSC1 crystal oscillation circuit
(Unless otherwise specified: V
DD
=3.0V, V
SS
=0V, f
OSC1
=32.768kHz, C
G
=25pF, C
D
=built-in, Ta=25°C)
Characteristic
Symbol
Condition
Min.
Typ.
Max.
Unit
Oscillation start voltage
Vsta
t
sta≤3sec (V
DD
)
1.1
V
Oscillation stop voltage
Vstp
t
stp≤10sec
Normal mode
1.1
V
(V
DD
)
Doubler mode
0.9
V
Built-in capacitance (drain)
C
D
Including the parasitic capacity inside the IC (in chip)
14
pF
Frequency/voltage deviation
∂f/∂V
V
DD
=0.9 to 3.6V
with VDC switching
10
ppm
without VDC switching
5
ppm
Frequency/IC deviation
∂f/∂IC
-10
10
ppm
Frequency adjustment range
∂f/∂C
G
C
G
=5 to 25pF
32.768kHz
30
40
ppm
76.8kHz
20
25
ppm
153.6kHz
8
10
ppm
Harmonic oscillation start voltage V
hho
C
G
=5pF (V
DD
)
3.6
V
Permitted leak resistance
R
leak
Between OSC1 and V
DD
, V
SS
200
MΩ
OSC3 CR oscillation circuit
Characteristic
Oscillation frequency dispersion
Oscillation start voltage
Oscillation start time
Oscillation stop voltage
(Unless otherwise specified: V
DD
=3.0V, V
SS
=0V, R
CR
=120kΩ, Ta=25°C)
Symbol
Condition
Min.
Typ.
Max.
Unit
f
OSC3
-30
310kHz
30
%
Vsta Normal mode
(V
DD
)
2.2
V
Doubler mode
(V
DD
)
0.9
V
t
sta V
DD
=2.2 to 3.6V (Doubler mode: V
DD
=0.9 to 2.2V)
3
mS
Vstp Normal mode
(V
DD
)
2.2
V
Doubler mode
(V
DD
)
0.9
V
CR oscillation frequency-resistance characteristics
1000
CR oscillation frequency f
OSC3
[kHz]
V
DD
= 2.2 to 3.6 V (Normal mode)
V
DD
= 0.9 to 2.2 V (Doubler mode)
V
SS
= 0 V
Ta = 25°C
Typ. value
100
10
10
100
1000
10000
CR oscillation resistance R
CR
[kΩ]
7
SEIKO [ SEIKO EPSON CORPORATION ]
