E0C6233
q
Oscillation Characteristics
The oscillation characteristics change depending on the conditions (components used, board pattern, etc.). Use the follow-
ing characteristics as reference values.
E0C6233 (Crystal oscillation circuit)
(Unless otherwise specified: V
DD
=0V, V
SS
=-3.0V, Crystal: C-002R (C
I
=35kΩ), C
G
=25pF, C
D
=built-in, Ta=25°C)
Condition
Unit
Characteristic
Symbol
Min.
Typ.
Max.
V
t
sta≤5sec
(V
SS
)
Oscillation start voltage
Vsta
-1.8
V
(V
SS
)
t
stp≤10sec
Oscillation stop voltage
Vstp
-1.8
pF
Including the parasitic capacity inside the IC
Built-in capacitance (drain)
C
D
18
∂f/∂V
ppm
V
SS
=-1.8 to -3.5V
Frequency/voltage deviation
5
∂f/∂IC
ppm
Frequency/IC deviation
-10
10
∂f/∂C
G
C
G
=5 to 25pF
ppm
Frequency adjustment range
35
45
V
(V
SS
)
Harmonic oscillation start voltage V
hho
-3.5
Between OSC1 and V
DD
, V
SS
R
leak
MΩ
Permitted leak resistance
200
E0C62L33 (Crystal oscillation circuit)
(Unless otherwise specified: V
DD
=0V, V
SS
=-1.5V, Crystal: C-002R (C
I
=35kΩ), C
G
=25pF, C
D
=built-in, Ta=25°C)
Characteristic
Symbol
Condition
Min.
Typ.
Max.
Unit
Oscillation start voltage
Vsta
t
sta≤5sec
(V
SS
)
-1.1
V
Oscillation stop voltage
Vstp
t
stp≤10sec
(V
SS
) -1.1(-0.9)*
1
V
Built-in capacitance (drain)
C
D
Including the parasitic capacity inside the IC
18
pF
Frequency/voltage deviation
∂f/∂V
V
SS
=-1.1 to -1.7V (-0.9)
*
1
5
ppm
Frequency/IC deviation
∂f/∂IC
-10
10
ppm
Frequency adjustment range
∂f/∂C
G
C
G
=5 to 25pF
35
45
ppm
Harmonic oscillation start voltage V
hho
(V
SS
)
-1.7
V
Permitted leak resistance
R
leak
Between OSC1 and V
DD
, V
SS
200
MΩ
∗1:
Items enclosed in parentheses ( ) are those used when operating at heavy load protection mode.
Note, however, that the ON time for SVD must be limited to 10 msec per second of operation time.
E0C62A33 (Crystal oscillation circuit)
(Unless otherwise specified: V
DD
=0V, V
SS
=-3.0V, Crystal: C-002R (C
I
=35kΩ), C
G
=25pF, C
D
=built-in, Ta=25°C)
Characteristic
Symbol
Min.
Typ.
Max.
Condition
Unit
t
sta≤5sec
(V
SS
)
Oscillation start voltage
Vsta
-2.2
V
(V
SS
)
t
stp≤10sec
Oscillation stop voltage
Vstp
-2.2
V
Including the parasitic capacity inside the IC
Built-in capacitance (drain)
C
D
18
pF
∂f/∂V
V
SS
=-2.2 to -3.5V
Frequency/voltage deviation
5
ppm
∂f/∂IC
Frequency/IC deviation
-10
10
ppm
∂f/∂C
G
C
G
=5 to 25pF
Frequency adjustment range
35
45
ppm
(V
SS
)
Harmonic oscillation start voltage V
hho
-3.5
V
Between OSC1 and V
DD
, V
SS
R
leak
Permitted leak resistance
200
MΩ
E0C62A33 (CR oscillation circuit)
Characteristic
Oscillation frequency dispersion
Oscillation start voltage
Oscillation start time
Oscillation stop voltage
Symbol
f
OSC3
Vsta
t
sta V
SS
=-2.2 to -3.5V
Vstp
(Unless otherwise specified: V
DD
=0V, V
SS
=-3.0V, R
CR
=82kΩ, Ta=25°C)
Min.
Typ.
Max.
Unit
Condition
-30
430kHz
30
%
-2.2
V
(V
SS
)
3
mS
-2.2
V
(V
SS
)
E0C62A33 (Ceramic oscillation circuit)
Characteristic
Oscillation start voltage
Oscillation start time
Oscillation stop voltage
(Unless otherwise specified: V
DD
=0V, V
SS
=-3.0V, ceramic oscillation: 500kHz, C
GC
=C
DC
=100pF, Ta=25°C)
Symbol
Condition
Min.
Typ.
Max.
Unit
Vsta
(V
SS
)
-2.2
V
t
sta V
SS
=-2.2 to -3.5V
5
mS
Vstp
(V
SS
)
-2.2
V
8
SEIKO [ SEIKO EPSON CORPORATION ]
