SM5009 series
Electrical Characteristics
5009AL× series
3V operation: V
DD
= 2.7 to 3.3V, V
SS
= 0V, Ta =
−40
to 85°C unless otherwise noted.
Rating
Parameter
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
Output leakage current
Symbol
V
OH
V
OL
V
IH
V
IL
I
Z
Condition
min
Q: Measurement cct 1, I
OH
= 8mA
Q: Measurement cct 1, I
OL
= 8mA
INHN
INHN
Q: Measurement cct 2, INHN = LOW, V
OH
= V
DD
Q: Measurement cct 2, INHN = LOW, V
OL
= V
SS
CF5009AL1
CF5009AL2
INHN = open, Measurement cct 3,
load cct 2, C
L
= 15pF,
40MHz crystal oscillator
CF5009AL3
CF5009AL4
CF5009AL5
CF5009AL6
Current consumption
I
DD
SM5009AL1S
SM5009AL2S
INHN = open, Measurement cct 3,
load cct 2, C
L
= 15pF,
40MHz crystal oscillator,
Ta = –20 to +80°C
SM5009AL3S
SM5009AL4S
SM5009AL5S
SM5009AL6S
Standby current
INHN pull-up resistance
Negative resistance
Feedback resistance
Built-in capacitance
I
ST
R
UP1
R
UP2
−R
L
R
f
C
G
C
D
INHN = V
SS
, Measurement cct 3
Measurement cct 4, V
DD
= 3V, INHN = V
SS
Measurement cct 4, V
DD
= 3V, INHN = 2.1V
V
DD
= 3V, Ta = 25°C, 40MHz
Measurement cct 5
Design value. A monitor pattern on a wafer is tested.
9.3
10
10.7
pF
2.2
–
0.7V
DD
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.6
40
–
0.4
5.58
typ
–
–
–
–
–
–
8
5
4
3
3
2
8
5
4
3
3
2
2
–
–
–200
–
6
max
–
0.4
–
0.3V
DD
10
µA
10
17
11
9
7
6
5
mA
17
11
9
7
6
5
5
12
200
–
1.1
6.42
µA
MΩ
kΩ
Ω
MΩ
pF
V
V
V
V
Unit
SEIKO NPC CORPORATION —6
SEIKO [ SEIKO EPSON CORPORATION ]
