SCG3019
N-Channel Enhancement MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
CHARACTERISTICS
SYMBOL MIN TYP MAX UNIT
Off Characteristics
TEST CONDITIONS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BVDSS
IDSS
30
-
-
-
-
-
-
-
-
-
1
V
μA
μA
V
VGS = 0V, ID = 10μA
VDS = 30V, VGS = 0V
VGS= ±20V, VDS=0V
VDS= 3V, ID=100μA
IGSS
-
±1
1.5
8
Gate Threshold Voltage
VGS(th)
0.8
-
VGS= 4V, ID = 10mA
Static Drain-Source On Resistance
Forward transfer admittance
RDS(ON)
Ω
-
13
-
VGS= 2.5V, ID = 1mA
gfs
20
mS VDS= 3V, ID = 10mA
Dynamic Characteristics
Input Capacitance
Ciss
Coss
Crss
-
-
-
13
9
-
-
-
Output Capacitance
pF
nS
VDS= 5V, VGS= 0V, f= 1MHz
Reverse Transfer Capacitance
4
Switching Characteristics
Turn-On Delay Time
Rise Time
Td(ON)
Tr
Td(OFF)
Tf
-
-
-
-
15
35
80
80
-
-
-
-
VGS= 5V, VDD= 5V, ID= 10mA,
RG= 10Ω, RL= 500Ω
Turn-Off Delay Time
Fall Time
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-May-2010 Rev. A
Page 2 of 4
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
