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SCG3019 参数 Datasheet PDF下载

SCG3019图片预览
型号: SCG3019
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型MOSFET [N-Channel Enhancement MOSFET]
分类和应用:
文件页数/大小: 4 页 / 191 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
 浏览型号SCG3019的Datasheet PDF文件第2页浏览型号SCG3019的Datasheet PDF文件第3页浏览型号SCG3019的Datasheet PDF文件第4页  
SCG3019  
N-Channel Enhancement MOSFET  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
SOT-523  
FEATURES  
Low on-resistance.  
Fast switching speed.  
Low voltage drive makes this device ideal for portable equipment.  
Easily designed drive circuits.  
Easy to parallel.  
EQUIVALENT CIRCUIT  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
1.50  
0.75  
0.60  
0.23  
Max.  
1.70  
0.95  
0.80  
0.33  
Min.  
Max.  
A
B
C
D
K
M
N
S
0.30  
---  
---  
0.50  
o
10  
o
10  
1.50  
1.70  
G
J
0.50BSC  
0.10  
0.20  
MAXIMUM RATINGS (TA=25unless otherwise specified)  
PARAMETER  
SYMBOL  
RATING  
30  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
VDSS  
VGSS  
ID  
±20  
V
Continuous Drain Current  
0.1  
A
Total Power Dissipation  
PD  
0.15  
W
Operating Junction Temperature Range  
Operating Storage Temperature Range  
Thermal Resistance, Junction to Ambient  
TJ  
150  
°C  
TSTG  
RθJA  
-55~150  
833  
°C  
°C / W  
DEVICE MARKING  
KN  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
04-May-2010 Rev. A  
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