Elektronische Bauelemente
BC846A, B
BC847A, B, C
BC848A, B, C
BC846A/B, BC847A/B, BC848A/B
1.0
hFE , DC CURRENT GAIN (NORMALIZED)
VCE = 5 V
TA = 25°C
2.0
1.0
0.5
0.2
0.1 0.2
10
100
1.0
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
TA = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.2
0.5
1.0
10 20
2.0
5.0
IC, COLLECTOR CURRENT (mA)
50
100
200
VBE @ VCE = 5.0 V
Figure 7. DC Current Gain
2.0
TA = 25°C
1.6
20 mA
1.2
0.8
0.4
0
IC =
10 mA
50 mA
100 mA
200 mA
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
Figure 8. “On” Voltage
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
θ
VB for VBE
-55°C to 125°C
0.02
0.05
0.1
0.2
0.5
1.0 2.0
IB, BASE CURRENT (mA)
5.0
10
20
0.2
0.5
10 20
5.0
1.0 2.0
IC, COLLECTOR CURRENT (mA)
50
100
200
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
TA = 25°C
C, CAPACITANCE (pF)
20
Cib
f T, CURRENT-GAIN - BANDWIDTH PRODUCT
40
500
200
100
50
20
VCE = 5 V
TA = 25°C
10
6.0
4.0
Cob
2.0
0.1
0.2
0.5
5.0
1.0 2.0
10 20
VR, REVERSE VOLTAGE (VOLTS)
50
100
1.0
5.0 10
50 100
IC, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
http://www.SeCoSGmbH.com
Figure 12. Current–Gain – Bandwidth Product
Any changing of specification will not be informed individual
01-Jun-2004 Rev.B
Page 3 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
