Elektronische Bauelemente
BC846A, B
BC847A, B, C
BC848A, B, C
BC846A/B, BC847A/B, BC848A/B
1.0
VCE = 10 V
TA = 25°C
V, VOLTAGE (VOLTS)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
VCE(sat) @ IC/IB = 10
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IC, COLLECTOR CURRENT (mAdc)
50 70 100
TA = 25°C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
Typical Characteristics
2.0
hFE , NORMALIZED DC CURRENT GAIN
1.5
1.0
0.8
0.6
0.4
0.3
0.2
0.2
0.5
50
2.0
5.0 10
1.0
20
IC, COLLECTOR CURRENT (mAdc)
100
200
Figure 1. Normalized DC Current Gain
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
0.8
0.4
0
IC = IC = IC = 50 mA
10 mA 20 mA
IC = 100 mA
1.0
Figure 2. “Saturation” and “On” Voltages
VCE , COLLECTOR-EMITTER VOLTAGE (V)
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.02
0.1
1.0
IB, BASE CURRENT (mA)
10
20
0.2
10
1.0
IC, COLLECTOR CURRENT (mA)
100
Figure 3. Collector Saturation Region
10
7.0
C, CAPACITANCE (pF)
5.0
3.0
Cob
2.0
Cib
TA = 25°C
f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
400
300
200
Figure 4. Base–Emitter Temperature Coefficient
100
80
60
40
30
20
0.5 0.7
1.0
VCE = 10 V
TA = 25°C
1.0
0.4 0.6 0.8 1.0
4.0 6.0 8.0 10
2.0
VR, REVERSE VOLTAGE (VOLTS)
20
40
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
50
Figure 5. Capacitances
http://www.SeCoSGmbH.com
Figure 6. Current–Gain – Bandwidth Product
Any changing of specification will not be informed individual
01-Jun-2004 Rev.B
Page 2 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
