2SC3356
Elektronische Bauelemente
NPN Silicon
Plastic-Encapsulate Transistor
2SC3356
TYPICAL CHARACTERISTICS (T
A
= 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
P
T
-Total Power Dissipation-mW
200
C
re
-Feed-back Capacitance-pF
Free Air
f = 1.0 MHz
1
100
0.5
0
50
100
150
0.3
0
0.5
1
2
5
10
20
30
T
A
-Ambient Temperature-°C
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
V
CE
= 10 V
15
V
CB
-Collector to Base Voltage-V
INSERTION GAIN vs.
COLLECTOR CURRENT
h
FE
-DC Current Gain
100
|S
21e
|
2
-Insertion Gain-dB
10
50
5
V
CE
= 10 V
f = 1.0 GHz
1
5
10
50 70
I
C
-Collector Current-mA
20
10
0.5
1
5
10
50
0
0.5
I
C
-Collector Current-mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
10
INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY
G
max
f
T
-Gain Bandwidth Product-MHz
3.0
2.0
1.0
0.5
0.3
0.2
V
CE
= 10 V
0.1
0
0.5 1.0
5.0 10
30
G
max
-Maximum Gain-dB
|S
21e
|
2
-Insertion Gain-dB
5.0
20
|S
21e
|
2
10
0
V
CE
= 10 V
I
C
= 20 mA
0.1
0.2
0.4 0.6 0.81.0
2
f-Frequency-GHz
I
C
-Collector Current-mA
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
2
of
3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
