2SC3356
Elektronische Bauelemente
NPN Silicon
Plastic-Encapsulate Transistor
A suffix of "-C" specifies halogen & lead-free
SOT-23
Dim
A
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
A
L
FEATURES
n
3.COLLECTOR
3
B
C
B S
2
Power Dissipation
RoHS Compliant Product
1.BASE
2.EMITTER
Top View
1
D
G
H
J
K
L
S
V
n
V
G
C
D
H
K
J
All Dimension in mm
MAXIMUM RATINGS*
T
A
=25 C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
o
o
Value
20
12
3
0.1
Units
V
V
V
A
W
o
0.2
-55~150
C
ELECTRICAL CH ARACTERIST ICS (Tam b = 25 C
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Noise figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
unless otherwise sp ecified )
Test
conditions
MIN
20
12
3
1
1
50
6
2
300
GHz
dB
TYP
MAX
UNIT
V
V
V
Ic=10
µ
A, I
E
=0
Ic= 1mA, I
B
=0
I
E
= 10
µ
A, I
C
=0
V
CB
= 10 V , I
E
=0
V
EB
= 1V ,
I
C
=0
µ
A
µ
A
V
CE
= 10V, I
C
= 20mA
V
CE
=10V, I
C
= 20mA
V
CE
=10V, I
C
= 7mA, f = 1GHz
f
T
F
CLASSIFICATION OF h
FE
Marking
Rank
Range
http://www.SeCoSGmbH.com
R23
Q
50-100
R24
R
80-160
R25
S
125-250
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
