2N7002T
Elektronische Bauelemente
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
CHARACTERISTICS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
SYMBOL MIN TYP MAX UNIT
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(ON)
60
1
-
-
500
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.5
±80
80
-
7.5
Ω
1
7.5
500
3.75
V
0.05
0.375
1.2
50
25
5
pF
V
mS
V
V
nA
nA
mA
TEST CONDITIONS
V
GS
= 0V, I
D
= 10μA
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 0V, V
GS
= ±25V
V
DS
= 60V, V
GS
= 0V
V
GS
= 10V, V
DS
= 7V
V
GS
= 10V, I
D
= 500mA
V
GS
= 5V, I
D
= 50mA
V
DS
= 10V, I
D
= 200mA
V
GS
= 10V, I
D
= 500mA
V
GS
= 5V, I
D
= 50mA
I
S
= 115mA, V
GS
= 0V
Drain-Source On Resistance
R
DS(ON)
Forward transfer admittance
gfs
80
0.5
Drain-Source On Voltage
V
DS(ON)
Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
SD
C
iss
C
oss
C
rss
0.55
-
-
-
V
DS
= 25V, V
GS
= 0V, f= 1MHz
SWITCHING TIME
Turn-On Time
T
d(ON)
-
-
20
nS
Turn-Off Time
T
d(OFF)
-
-
40
R
L
= 50Ω
V
GEN
= 10V, V
DD
= 25V,
I
D
= 500mA, R
G
= 25Ω,
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Jun-2010 Rev. B
Page 2 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
