2N7002T
Elektronische Bauelemente
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-523
FEATURES
High density cell design for low R
DS(ON)
.
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
DEVICE MARKING：K72
Drain
REF.
A
B
C
D
G
J
Gate
Millimeter
Min.
Max.
1.50
1.70
0.75
0.95
0.60
0.80
0.23
0.33
0.50BSC
0.10
0.20
REF.
K
M
N
S
Millimeter
Min.
Max.
0.30
0.50
o
---
10
o
---
10
1.50
1.70
Source
MAXIMUM RATINGS
(T
A
=25℃ unless otherwise specified)
PARAMETER
Drain-Source Voltage
Drain Current
Power Dissipation
Operating Junction Temperature Range
Operating Storage Temperature Range
SYMBOL
V
DS
I
D
P
D
T
J
T
STG
RATING
60
115
150
150
-55~150
UNIT
V
mA
mW
°C
°C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Jun-2010 Rev. B
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
