2N7002KW
Elektronische Bauelemente
115mA , 60V, R
DS(ON)
4
N-Ch Small Signal MOSFET with ESD Protection
N-CHANNEL ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Drain-Source On-Resistance
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward Transconductance
Symbol
BV
DSS
V
GS(th)
R
DS(ON)
I
DSS
I
GSS
g
fs
Min.
Static
60
1
-
-
-
-
100
Typ.
2
-
-
-
-
-
-
-
Max.
-
2.5
4
3
1
±10
-
Unit
Test Conditions
V
GS
=0, I
D
=10μA
V
DS
= V
GS
, I
D
=250μA
V
GS
=4.5V, I
D
=200mA
V
GS
=10V, I
D
=500mA
V
DS
=60V, V
GS
=0
V
DS
=0, V
GS
= ±20V
V
DS
=15V, I
D
=250mA
V
Ω
μA
μA
mS
Dynamic
Total Gate Charge
Turn-On Time
Turn-Off Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
t
(on)
t
(off
C
iss
C
oss
C
rss
-
-
-
-
-
-
-
-
-
-
-
-
0.8
20
nS
40
35
10
5
pF
V
DS
=25V, V
GS
=0V, f=1MHz
nC
V
DS
=15V, V
GS
=4.5V, I
D
=200mA
V
DD
=30V, R
L
=150Ω,
I
D
=200mA, V
GEN
=10V,
R
G
=10Ω
Source-Drain Diode
Diode Forward Voltage
Continuous Diode Forward Current
Pulse Diode Forward Current
V
SD
I
S
I
SM
-
-
-
0.82
-
-
1.3
115
800
V
mA
mA
I
S
=200mA, V
GS
=0V
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
31-Mar-2011 Rev. A
Page 2 of 4
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
