2N7002KW
Elektronische Bauelemente
115mA , 60V, R
DS(ON)
4
N-Ch Small Signal MOSFET with ESD Protection
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
R
DS(ON)
, V
GS
@10V, I
DS
@500mA=3
R
DS(ON)
, V
GS
@4.5V, I
DS
@200mA=4
Advanced Trench Process Technology
High Density Cell Design For Ultra Low On-Resistance
Very Low Leakage Current In Off Condition
Specially Designed for Battery Operated Systems,
Solid-State Relays Drivers：Relays, Displays, Lamps,
Solenoids, Memories, etc.
ESD Protected 2KV HBM
In compliance with EU RoHS 2002/95/EC directives
Case: SOT-323 Package
Terminals: Solderable per MIL-STD-750,
Method 2026
SOT-323
A
3
L
3
Top View
1
2
C B
1
2
K
E
D
F
G
H
J
MECHANICAL DATA
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.20
1.40
0.20
0.40
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
-
-
0.650 TYP.
MARKING
K72
Drain
PACKAGE INFORMATION
Package
SOT-323
MPQ
3K
LeaderSize
7’ inch
Source
Gate
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Maximum Power Dissipation
T
A
=25°C
T
A
=75°C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
JA
T
J
, T
STG
Rating
60
±20
115
800
200
120
625
-55~150
Unit
V
V
mA
mA
mW
°C
/ W
°C
Thermal Resistance Junction-Ambient (PCB mounted)
2
Operating Junction and Storage Temperature
Notes:
1. Maximum DC current limited by the package.
2. Surface mounted on FR4 board, t < 5sec.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
31-Mar-2011 Rev. A
Page 1 of 4
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
