2N7002
Elektronische Bauelemente
115 mAMPS, 60VOLTS, RDS(on)=7.5
W
Small Signal MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
2.0
1.8
I D, DRAIN CURRENT (AMPS)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1.0
2.0 3.0 4.0 5.0
6.0
7.0 8.0
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
TA = 25°C
I D, DRAIN CURRENT (AMPS)
VGS = 10 V
9V
8V
7V
6V
5V
4V
3V
9.0
10
0
1.0
2.0 3.0 4.0
5.0
6.0 7.0 8.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
9.0
10
0.8
0.6
0.4
0.2
1.0
VDS = 10 V
-55°C
125°C
25°C
Figure 1. Ohmic Region
Figure 2. Transfer Characteristics
r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
VGS(th) , THRESHOLD VOLTAGE (NORMALIZED)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-60
-20
+20
+60
T, TEMPERATURE (°C)
+100
+140
VGS = 10 V
ID = 200 mA
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
-60
-20
+20
+60
T, TEMPERATURE (°C)
+100
+140
VDS = VGS
ID = 1.0 mA
Figure 3. Temperature versus Static
Drain–Source On–Resistance
Figure 4. Temperature versus Gate
Threshold Voltage
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01-Jun-2002 Rev. A
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