2N7002
Elektronische Bauelemente
115 mAMPS, 60VOLTS, RDS(on)=7.5
Small Signal MOSFET
RoHS Compliant Product
Small Signal MOSFET
115 mAmps, 60 Volts
N–Channel SOT–23
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Drain Current
– Continuous TC = 25°C (Note 1.)
– Continuous
TC = 100°C (Note 1.)
– Pulsed (Note 2.)
Gate–Source Voltage
– Continuous
– Non–repetitive (tp
≤
50
µs)
Symbol
VDSS
VDGR
ID
ID
IDM
Value
60
60
±115
±75
±800
Unit
Vdc
Vdc
mAdc
N–Channel
VGS
VGSM
±20
±40
Vdc
Vpk
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 3.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
556
300
2.4
R
θJA
TJ, Tstg
417
–55 to
+150
°C/W
°C
Unit
mW
mW/°C
°C/W
mW
mW/°C
3
1
2
2
R
θJA
PD
SOT–23
CASE 318
STYLE 21
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
1
025D
−−
2
Gate
5 = Y ear 2005
D = Weeks A~z
Source
02 = Device Code 7002
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 5
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
