2N7002DW
Elektronische Bauelemente
115 mAMPS, 60VOLTS, RDS(on)=7.5
W
Small Signal MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
1.0
I
D
,
DRAIN-SOURCE CURRENT (A)
0.8
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0.6
V
GS
= 10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0/1.0V
7
T
j
= 25°C
6
5
V
GS
= 5.0V
5.5V
4
3
2
1
0
5.0V
0.4
V
GS
= 10V
0.2
0
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1.0
V
DS
,
DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
2.0
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT (A)
Fig. 2 On-Resistance vs Drain Current
6
1.5
V
GS
= 10V, I
D
= 0.5A
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
5
4
I
D
= 50mA
3
2
I
D
= 500mA
1.0
V
GS
= 5.0V, I
D
= 0.05A
0.5
1
0
0
-55
-30
-5
20
45
70
95
120
145
T
j
, JUNCTION TEMPERATURE (°C)
Fig. 3 On-Resistance vs Junction Temperature
0
2
4
6
8
10
12
14
16
18
V
GS
, GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jan-2006 Rev.
B
Page
3
of
3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
